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| ibm [2020/12/23 13:26] – Michele GIUGLIANO | ibm [2020/12/23 13:26] – Michele GIUGLIANO | ||
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| **Relevant publications** | **Relevant publications** | ||
| - | * Mensch, P.; Moselund, K.; Karg, S.; Lörtscher, E.; Björk, M. & Riel, H. | + | * Mensch, P.; Moselund, K.; Karg, S.; Lörtscher, E.; Björk, M. & Riel, H. Interface State Density of Single Vertical Nanowire MOS Capacitors, IEEE Transactions on Nanotechnology, |
| - | Interface State Density of Single Vertical Nanowire MOS Capacitors, IEEE Transactions on Nanotechnology, | + | |
| * Moselund, K. E.; Schmid, H.; Bessire, C.; Björk, M. T.; Ghoneim, H. & Riel, H. InAs–Si Nanowire Heterojunction Tunnel FETs. IEEE Electron Device Letters, 2012, 33, 1453-1455 | * Moselund, K. E.; Schmid, H.; Bessire, C.; Björk, M. T.; Ghoneim, H. & Riel, H. InAs–Si Nanowire Heterojunction Tunnel FETs. IEEE Electron Device Letters, 2012, 33, 1453-1455 | ||
| * Wirths, S.; Mayer, B. F.; Schmid, H.; Sousa, M.; Gooth, J.; Riel, H. & Moselund, K. E. Room Temperature Lasing from Monolithically Integrated GaAs Microdisks on Si. ACS Nano, 2018, 12, 2169-2175 | * Wirths, S.; Mayer, B. F.; Schmid, H.; Sousa, M.; Gooth, J.; Riel, H. & Moselund, K. E. Room Temperature Lasing from Monolithically Integrated GaAs Microdisks on Si. ACS Nano, 2018, 12, 2169-2175 | ||