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ibm [2020/12/23 13:26]
Michele GIUGLIANO
ibm [2020/12/23 13:43]
Michele GIUGLIANO
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 [[https://ec.europa.eu/programmes/horizon2020/en|{{:ec-h2020.png?400}}]] [[https://ec.europa.eu/programmes/horizon2020/en|{{:ec-h2020.png?400}}]]
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 IBM Research – Zurich is the European branch of the IBM Research Division. Scientific and industrial research activities are conducted in three departments with ca. 400 researchers. It has made major contributions to the advancement of knowledge in material science, nanoscience and nanoscale physics stimulated by problems relevant to technology. Research in the Science & Technology department is concentrated in the fields of nano­technology and future emerging devices, advanced chip technology and materials science. IBM Research – Zurich is the first industrial research lab, which received the Historic Site Award of the European Physical Society for its contributions to physics including the Nobel prizes of 1986 and 1987, and the Kavli prize in nanoscience in 2016. IBM Research – Zurich is the European branch of the IBM Research Division. Scientific and industrial research activities are conducted in three departments with ca. 400 researchers. It has made major contributions to the advancement of knowledge in material science, nanoscience and nanoscale physics stimulated by problems relevant to technology. Research in the Science & Technology department is concentrated in the fields of nano­technology and future emerging devices, advanced chip technology and materials science. IBM Research – Zurich is the first industrial research lab, which received the Historic Site Award of the European Physical Society for its contributions to physics including the Nobel prizes of 1986 and 1987, and the Kavli prize in nanoscience in 2016.
  
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 **Relevant publications**  **Relevant publications** 
  
-  * Mensch, P.; Moselund, K.; Karg, S.; Lörtscher, E.; Björk, M. & Riel, H. +  * Mensch, P.; Moselund, K.; Karg, S.; Lörtscher, E.; Björk, M. & Riel, H. Interface State Density of Single Vertical Nanowire MOS Capacitors, IEEE Transactions on Nanotechnology, 2013, 12, 279 –282
- Interface State Density of Single Vertical Nanowire MOS Capacitors, IEEE Transactions on Nanotechnology, 2013, 12, 279 –282+
   * Moselund, K. E.; Schmid, H.; Bessire, C.; Björk, M. T.; Ghoneim, H. & Riel, H. InAs–Si Nanowire Heterojunction Tunnel FETs. IEEE Electron Device Letters, 2012, 33, 1453-1455     * Moselund, K. E.; Schmid, H.; Bessire, C.; Björk, M. T.; Ghoneim, H. & Riel, H. InAs–Si Nanowire Heterojunction Tunnel FETs. IEEE Electron Device Letters, 2012, 33, 1453-1455  
   * Wirths, S.; Mayer, B. F.; Schmid, H.; Sousa, M.; Gooth, J.; Riel, H. & Moselund, K. E. Room Temperature Lasing from Monolithically Integrated GaAs Microdisks on Si. ACS Nano, 2018, 12, 2169-2175    * Wirths, S.; Mayer, B. F.; Schmid, H.; Sousa, M.; Gooth, J.; Riel, H. & Moselund, K. E. Room Temperature Lasing from Monolithically Integrated GaAs Microdisks on Si. ACS Nano, 2018, 12, 2169-2175