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+ | ====== IUNET - Italy ====== | ||
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[[Start]] - [[About]] - [[Consortium]] - [[Events]] - [[Press & Dissemination]] | [[Start]] - [[About]] - [[Consortium]] - [[Events]] - [[Press & Dissemination]] | ||
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- | BLA BLA | + | {{ : |
- | BLA BLA | + | The “Consorzio Nazionale Interuniversitario per la Nanoelettronica” (IUNET, Italian Universities Nano-Electronics Team), is a non-profit organization, |
- | BLA BLA | + | |
+ | The following third parties are linked to participant IUNET: University of Modena and Reggio Emilia and University of Udine. They will participate to IN-FET following a well established model already used in several EU projects of the H2020, 6th and 7th FP. The selected IUNET units will participate to IN-FET with clearly distinct roles associated to unique and required expertise. IUNET-Udine has long standing experience in semi-classical modelling of nanoelectronic devices and it will develop continuous models for nanowire sensors and iontronic devices. IUNET-Unimore will focus on ionic transport using a kinetic Monte-Carlo (k-MC) approach and will also collaborate with IUNET-Udine and other partners for selected characterizations of materials and design of optimized devices. | ||
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+ | **Description the partner’s main task in IN-FET** | ||
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+ | IUNET’s main role in IN-FET is in the modeling, simulation and electrical characterization of the sensor and ion actuation devices for the proposed platform aimed at supporting device design and interpretation of the experimental results. Two partners of IUNET will participate to the project: University of Modena and Reggio Emilia (IUNET-UniMORE) and University of Udine (IUNET-UniUD), | ||
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+ | **Description and CV of the personnel carrying out the project** | ||
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+ | **Luca Selmi (male)** received the PhD in Electronic Engineering from University of Bologna in 1992. Since 2000 he has been Professor of Electronics (University of Udine, Italy); in 2017 he moved to University of Modena and Reggio Emilia, Italy. His research interests are in the field of electron device and sensor modelling and characterization, | ||
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+ | **Pierpaolo Palestri (male)** received the Laurea Degree in Electronic Engineering from the University of Bologna, Italy, in 1998, and the Ph.D. in Electronic Engineering from the University of Udine, Italy, in 2003. From July 2000 to September 2001 he held a post-doctoral position at Bell Laboratories, | ||
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+ | **Paolo Pavan (male)** is Professor of Electronics at the University of Modena and Reggio Emilia. He is Senior Member of the IEEE. He is now Associate Editor for the IEEE Journal of Electron Device Society. His research interests are in the field of electrical characterization and modeling of solid-state devices. He cooperates with italian and foreign companies for the development and optimization of new semiconductor memories. Presently he is working on characterization and compact modeling of innovative nonvolatile semiconductor memories based on RRAM technology, that can be used as artificial synapses. The developed compact models allow users to design neuro-inspired architectures based on synapses realized with HfO2 RRAM. | ||
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+ | **Luca Larcher (male)** received the Ph.D. degree in “Information Engineering” from the University of Modena and Reggio Emilia in 2002. He is currently Professor of Electronics. His research interests extend to the modeling and characterization of physical mechanisms governing the charge transport and degradation in dielectrics, | ||
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+ | **List of previous projects/ | ||
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+ | * CONVERGENCE, | ||
+ | * NANOFUNCTION, | ||
+ | * III-V-MOS, STREP, FP7, (2013-2016); | ||
+ | * NEREID, CSA, H2020 (2015-2018); | ||
+ | * STEEPER, STREP, FP7 (2012-2016); | ||
+ | * E2SWITCH, STREP, FP7 (2013-2017); | ||
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+ | **Description of infrastructures relevant for IN-FET** | ||
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+ | IUNET leverages excellent laboratory and computational facilities of the partner Universities. The IUNET units participating to the project have adequate computer hardware, software licenses (SDevice TCAD platform, MATLAB, etc.) and in-house developed simulators based on semi-classical continuum and discrete models for electron devices and electrolyte interfaces with electronic and ionic transport. The units’ electron device characterization laboratories are equipped with state-of-the-art instrumentation for on-wafer electrical measures in dc, ac, transient and rf regimes, especially those down to extremely low current values. An advanced nanoelectrode-array impedance spectroscopy sensor platform is also available for selected characterizations in liquid environment. | ||
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+ | **List of selected relevant publications** | ||
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+ | * C. Laborde et al., “Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays”, Nature Nanotech., 2015, DOI: 10.1038/ | ||
+ | * A. Bandiziol, et al., “A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/ | ||
+ | * P. Scarbolo et al., “Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors”, | ||
+ | * P. Palestri, et al., Sensitivity of Silicon Nanowire Biochemical Sensors, in Beyond-CMOS Nanodevices, | ||
+ | * E.Accastelli, | ||
+ | * A.Cossettini et al., “On the Response of Nanoelectrode Impedance Spectroscopy Measures to Plant, Animal, and Human Viruses”, accepted for publication, | ||
+ | * F. M. Puglisi et al., " | ||
+ | * J. Woo et al., " | ||
+ | * L. Larcher et al., " | ||
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